Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001)

Autoria(s): Jia R; Jiang DS; Liu HY; Wei YQ; Xu B; Wang ZG
Data(s)

2002
Identificador

http://ir.semi.ac.cn/handle/172111/11962

http://www.irgrid.ac.cn/handle/1471x/64951
Idioma(s)

英语
Fonte

Jia R; Jiang DS; Liu HY; Wei YQ; Xu B; Wang ZG .Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001) ,JOURNAL OF CRYSTAL GROWTH,2002,236 (1-3):499-499
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital