Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er
Data(s) |
2003
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Resumo |
Correlations between Si nanocrystal (nc-Si) related photoluminescence (PL), Er3+ emission and nonradiative defects in the Er-doped SiO2 films containing nc-Si (SRSO) are studied. Upon 514.5 nm laser excitation the erbium-doped SRSO samples exhibit PL peaks at around 0.8 and 1.54 mum, which can be assigned to the electron-hole recombination in nc-Si and the intra-4f transition in Er3+, respectively. With increasing Er3+ content in the films, Er3+ emission becomes intense while the PL at 0.8 mum decreases, suggesting a strong coupling of nc-Si and Er 31 ions. Hydrogen plasma treatment for the samples improve the PL intensities of the 0.8 and 1.54 mum bands, indicating H passivation for the nonradiative defects existing in the samples. Further-more, from the effect of hydrogen treatment for the samples, we observe variation of the number of nonradiative defects with annealing temperatures. (C) 2003 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Chen CY; Chen WD; Song SF; Hsu CC .Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er ,JOURNAL OF CRYSTAL GROWTH,2003 ,253 (1-4):10-15 |
Palavras-Chave | #半导体材料 #low dimensional structures #chemical vapor deposition processes #nanomaterials #semiconducting materials #SILICON NANOCRYSTALS #LUMINESCENCE #EXCITATION |
Tipo |
期刊论文 |