Controllable growth of semiconductor nanometer structures
| Data(s) |
2003
|
|---|---|
| Resumo |
Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alignment on InP(001) is discussed. (C) 2003 Elsevier Science Ltd. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang ZG; Wu J .Controllable growth of semiconductor nanometer structures ,MICROELECTRONICS JOURNAL,2003,34 (5-8):379-382 |
| Palavras-Chave | #半导体材料 #molecular beam epitaxy #nanostructures #INAS QUANTUM DOTS #SELF-ORGANIZATION #MONOLAYER COVERAGE #DENSITY #GAAS #ISLANDS #INP(001) #EPITAXY |
| Tipo |
期刊论文 |
