Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN
| Data(s) |
2003
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Hu GQ; Kong X; Wang YQ; Wan L; Duan XF; Lu Y; Liu XL .Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN ,JOURNAL OF MATERIALS SCIENCE LETTERS,2003,22 (22):1581-1583 |
| Palavras-Chave | #半导体材料 #MOLECULAR-BEAM EPITAXY #HIGH-QUALITY GAN #HETEROEPITAXIAL GROWTH #HETEROSTRUCTURES |
| Tipo |
期刊论文 |
