InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth
| Data(s) |
2005
|
|---|---|
| Resumo |
Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as an active region. The devices exhibited properties of 110 run bandwidth with the centre of 1.1 mu m and above 30 mW output under pulse injection at room temperature. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Liu N; Jin P; Wang ZG .InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth ,ELECTRONICS LETTERS,2005,41(25):1400-1402 |
| Palavras-Chave | #半导体材料 #SPECTRUM |
| Tipo |
期刊论文 |
