Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers

Zincblende CrSb (zb-CrSb) layers with room-temperature ferromagnetism have been grown on relaxed and strained (In,Ga)As buffer layers epitaxially prepared on (001) GaAs substrates by molecular-beam epitaxy. The structural characterizations of CrSb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction (GID). The results of GID experiments indicate that no sign of second phase exists in all the zb-CrSb layers. Superconducting quantum interference device measurements demonstrate that the thickness of zb-CrSb layers grown on both relaxed and strained (In,Ga)As buffer layers can be increased to similar to 12 monolayers (similar to 3.6nm), compared to similar to 3 monolayers (similar to 1nm) on GaAs directly.