Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature


Autoria(s): Su FH (Su Fu Hai); Wang WJ (Wang Wen Jie); Ding K (Ding Kun); Li GH (Li Guo Hua); Liu YF (Liu Yuangfang); Joly AG (Joly Alan G.); Chen W (Chen Wei)
Data(s)

2006

Resumo

The temperature and pressure dependences of band-edge photo luminescence from ZnO microrods have been investigated. The energy separation between the free exciton (FX) and its first order phonon replica (FX-1LO) decreases at a rate of k(B)T with increasing temperature. The intensity ratio of the FX-1LO to the bound exciton (BX) emission is found to decrease slightly with increasing pressure. All of the exciton emission peaks show a blue shift with increasing pressure. The pressure coefficient of the FX transition, longitudinal optical (LO) phonon energy, and binding energy of BX are estimated to be 21.4, 0.5, and 0.9 meV/GPa, respectively. (c) 2006 Elsevier Ltd. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/10318

http://www.irgrid.ac.cn/handle/1471x/64352

Idioma(s)

英语

Fonte

Su FH (Su Fu Hai); Wang WJ (Wang Wen Jie); Ding K (Ding Kun); Li GH (Li Guo Hua); Liu YF (Liu Yuangfang); Joly AG (Joly Alan G.); Chen W (Chen Wei) .Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature ,JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2006,67(11):2376-2381

Palavras-Chave #半导体物理 #luminescence #phonon #OPTICAL-PROPERTIES #EXCITON #NANOWIRES #SAPPHIRE #GROWTH
Tipo

期刊论文