Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors
| Data(s) |
2007
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|---|---|
| Resumo |
The interface of wet oxidized Al0.97Ga0.03As/GaAs in a distributed Bragg reflector (DBR) structure has been studied by means of transmission electron microscopy and Raman spectroscopy. With the extension of oxidation time, the oxide/GaAs interfaces are not abrupt any more. There is an amorphous film near the oxide/GaAs interface, which is Ga2O3 related to the prolonged heating. In the samples oxidized for 10 and 20 min, there are some fissures along the oxidized AlGaAs/GaAs interfaces. In the samples oxidized or in situ annealed for long time, no such fissures are present due to the complete removal of the volatile products. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Li RY (Li R. Y.); Wang ZG (Wang Z. G.); Xu B (Xu B.); Jin P (Jin P.); Guo X (Guo X.); Chen M (Chen M.) .Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2007,86(1):19-22 |
| Palavras-Chave | #半导体材料 #SURFACE-EMITTING LASERS #VERTICAL-CAVITY LASERS #OXIDATION #MICROSTRUCTURE #ALXGA1-XAS |
| Tipo |
期刊论文 |
