Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE

A novel unselective regrowth buried heterostructure (BH) long-wavelength superluminescent diode (SLD), which has a grade-strained bulk InGaAs active region, was developed by metalorganic vapor-phase epitaxy (MOVPE). The 3 dB emission spectrum bandwidth of the SLD is about 65 nm with the range from 1596 to 1661 nm at 90 mA and front 1585 to 1650 nm at 150 mA. An output power of 3.5 mW is obtained at 200 mA injection current under CW operation at room temperature. (c) 2006 Elsevier B.V. All rights reserved.