Origin of deep level defect related photoluminescence in annealed InP
| Data(s) |
2006
|
|---|---|
| Resumo |
Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS), and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3 eV has been observed in the InP sample annealed in iron phosphide ambient. Both the 1.3 eV PL emission and a defect at E-C-0.18 eV correlate with a divacancy detected in the annealed InP sample. The results make a divacancy defect and related property identified in the annealed InP. (c) 2006 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Miao, SS (Miao, Shanshan); Deng, AH (Deng, Aihong); Yang, J (Yang, Jun); Wang, B (Wang, Bo) .Origin of deep level defect related photoluminescence in annealed InP ,JOURNAL OF APPLIED PHYSICS,DEC 15 2006,100 (12):Art.No.123519 |
| Palavras-Chave | #半导体材料 #DOPED SEMIINSULATING INP |
| Tipo |
期刊论文 |
