Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)
| Data(s) |
2007
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| Resumo |
Low indium content InGaN/AlGaN multiple quantum wells (MQWs) have been grown on Si(111) substrate by metal-organic chemical vapour deposition (MOCVD). A new method of using an isoelectronic indium-doped AlGaN barrier has been found to be very effective in improving the crystalline quality and interfacial abruptness of InGaN quantum well layers. We grew five periods of In0.06Ga0.94N/Al0.20Ga0.80N:In MQWs with In-doped barrier layers and obtained strong near-ultraviolet (UV) emission (similar to 400 nm) at room temperature. An In-doped AlGaN barrier improves the room-temperature PL intensity of InGaN/AlGaN MQWs, making it a candidate barrier for a near-UV source on Si substrate. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wu, JJ (Wu, Jiejun); Zhang, GY (Zhang, Guoyi); Liu, XL (Liu, Xianglin); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo); Jia, QJ (Jia, Quanjie); Guo, LP (Guo, Liping) .Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) ,NANOTECHNOLOGY,JAN 10 2007,18 (1):Art.No.015402 |
| Palavras-Chave | #半导体材料 #CHEMICAL-VAPOR-DEPOSITION |
| Tipo |
期刊论文 |
