Energy band design for Si/SiGe quantum cascade laser
Data(s) |
2007
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Resumo |
This paper introduces in detail the working principle of Si/SiGe Quantum cascade laser(QCL). Appropriate parameters are used to calculate the hole subband structure of Si/Si1-xGex quantum well using a six-band k center dot p method. The dispersion relation and energy band for different layer thickness and compositions are investigated. Meanwhile, the energy separations between hole subbands in Si/Si1-xGex/Si quantum wells are also analyzed. Finally the calculated results are used for the Si/SiGe QCL design, which will be beneficial to the structure optimization of Si/SiGe QCL. |
Identificador | |
Idioma(s) |
中文 |
Fonte |
Lin, GJ (Gui-Jiang, Lin); Zhou, ZW (Zhou Zhi-Wen); Lai, HK (Lai Hong-Kai); Li, C (Li Cheng); Chen, SY (Chen Song-Yan); Yu, JZ (Yu Jin-Zhong) .Energy band design for Si/SiGe quantum cascade laser ,ACTA PHYSICA SINICA,JUL 2007,56 (7):4137-4142 |
Palavras-Chave | #光电子学 #SiGe material |
Tipo |
期刊论文 |