Carrier channels of multimodal-sized quantum dots: A surface-mediated adatom migration picture


Autoria(s): Ding F (Ding Fei); Chen YH; Tang CG; Xu B (Xu Bo); Wang ZG
Data(s)

2007

Resumo

This paper focuses on the study of carrier channels of multimodal-sized quantum dots formed on patterned substrate by a rate-equation-based model. Surface-mediated indium adatom migration is revealed by a direct comparison between quantum dot wetting layer, which acts as carrier channel, formed on a flat substrate and on a patterned substrate. For the assessment of suitability, the carrier channel of the dot-in-well structure has also been studied by the present model, and the transition energies of the carrier channel (e.g., InGaAs quantum well) obtained from theoretical simulation agree fairly well with those obtained from the reflectance measurements.

Identificador

http://ir.semi.ac.cn/handle/172111/9232

http://www.irgrid.ac.cn/handle/1471x/64028

Idioma(s)

英语

Fonte

Ding, F (Ding, Fei); Chen, YH (Chen, Y. H.); Tang, CG (Tang, C. G.); Xu, B (Xu, Bo); Wang, ZG (Wang, Z. G.) .Carrier channels of multimodal-sized quantum dots: A surface-mediated adatom migration picture ,PHYSICAL REVIEW B,SEP 2007,76 (12):Art.No.125404

Palavras-Chave #半导体材料 #TEMPERATURE-DEPENDENCE
Tipo

期刊论文