Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy

Autoria(s): Zhang RQ (Zhang Riqing); Zhang PF (Zhang Panfeng); Kang TT (Kang Tingting); Fan HB (Fan Haibo); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang, Zhanguo)
Data(s)

2007
Resumo

The valence band offset (VBO) of the wurtzite InN/ZnO heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.82 +/- 0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.85 -/+ 0.23 eV, which indicates a type-I band alignment for InN/ZnO heterojunction. (C) 2007 American Institute of Physics.
Identificador

http://ir.semi.ac.cn/handle/172111/9220

http://www.irgrid.ac.cn/handle/1471x/64022
Idioma(s)

英语
Fonte

Zhang, RQ (Zhang, Riqing); Zhang, PF (Zhang, Panfeng); Kang, TT (Kang, Tingting); Fan, HB (Fan, Haibo); Liu, XL (Liu, Xianglin); Yang, SY (Yang, Shaoyan); Wei, HY (Wei, Hongyuan); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo) .Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy ,APPLIED PHYSICS LETTERS,OCT 15 2007,91 (16):Art.No.162104
Palavras-Chave #半导体材料 #INN
Tipo

期刊论文
Acesso ao item digital