Memory effect in a system of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
Data(s) |
2007
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Resumo |
Zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs matrices are fabricated by in situ postgrowth annealing diluted magnetic semiconductor (Ga,Mn)As films with Mn concentration ranging from 2.6% to 8% at 650 degrees C. Magnetization measurements show that memory effect and slow magnetic relaxation, the typical characteristics of the spin-glass-like phase, occur below the blocking temperature of 45 K in samples with high Mn concentration, while for samples with low Mn concentration, ferromagnetic order remains up to 360 K. The behavior of low-temperature spin dynamics can be explained by the hierarchical model. (c) 2007 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang, WZ (Wang, W. Z.); Deng, JJ (Deng, J. J.); Lu, J (Lu, J.); Sun, BQ (Sun, B. Q.); Zhao, JH (Zhao, J. H.) .Memory effect in a system of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs ,APPLIED PHYSICS LETTERS,NOV 12 2007,91 (20):Art.No.202503 |
Palavras-Chave | #半导体物理 #SEMICONDUCTORS |
Tipo |
期刊论文 |