Photo-capacitance response of internal tunnelling coupling in quantum-dot-imbedded heterostructures under selective photo-excitation

Under selective photo-excitation, the capacitance response of internal tunnelling coupling in quantum-dots-imbedded heterostructures is studied to clarify the electronic states and the number densities of electrons filling in the quantum dots (QDs). The random nature for both optical transitions and the filling in a QD assembly makes highly resolved capacitance peaks appear in the C-V characteristic after turning off the photo-excitation.