Influence of level filling on optical properties of quantum well
Data(s) |
2004
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Resumo |
In a specially- designed three-barrier-double-well tunneling structure, electron injecting from the emitter in combination with escaping through a resonant-tunneling structure were used to adjust and control the filling of electrons in different subbands. It was observed that the occupation in the first-excited electron state can result in a suppression to quantum confinement Stark effect. Moreover, at very low bias, a series of intrigue photoluminescence peaks appeared as a small quantity of excess electron was filled in the ground state of the quantum well, that cannot be explained by the theory of hand-to-hand transition in the framework of single electron picture. |
Identificador | |
Idioma(s) |
中文 |
Fonte |
Zhu, L; Zheng, HZ; Tan, PH; Zhou, X; Ji, Y; Yang, FH; Li, GR; Zeng, YX .Influence of level filling on optical properties of quantum well ,ACTA PHYSICA SINICA,DEC 2004 ,53 (12):4334-4340 |
Palavras-Chave | #半导体物理 #resonant tunneling |
Tipo |
期刊论文 |