Influence of level filling on optical properties of quantum well


Autoria(s): Zhu, L; Zheng, HZ; Tan, PH; Zhou, X; Ji, Y; Yang, FH; Li, GR; Zeng, YX
Data(s)

2004

Resumo

In a specially- designed three-barrier-double-well tunneling structure, electron injecting from the emitter in combination with escaping through a resonant-tunneling structure were used to adjust and control the filling of electrons in different subbands. It was observed that the occupation in the first-excited electron state can result in a suppression to quantum confinement Stark effect. Moreover, at very low bias, a series of intrigue photoluminescence peaks appeared as a small quantity of excess electron was filled in the ground state of the quantum well, that cannot be explained by the theory of hand-to-hand transition in the framework of single electron picture.

Identificador

http://ir.semi.ac.cn/handle/172111/8928

http://www.irgrid.ac.cn/handle/1471x/63994

Idioma(s)

中文

Fonte

Zhu, L; Zheng, HZ; Tan, PH; Zhou, X; Ji, Y; Yang, FH; Li, GR; Zeng, YX .Influence of level filling on optical properties of quantum well ,ACTA PHYSICA SINICA,DEC 2004 ,53 (12):4334-4340

Palavras-Chave #半导体物理 #resonant tunneling
Tipo

期刊论文