Semiconductor nanometer structures and devices
| Data(s) |
2004
|
|---|---|
| Resumo |
Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/lnP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. Laser devices and superluminescent diodes were fabricated with InAs/GaAs self-assembled quantum dots as the active region. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang, ZG; Wu, J .Semiconductor nanometer structures and devices ,JOURNAL OF THE KOREAN PHYSICAL SOCIETY,DEC 2004,45 Suppl.S (0):S877-S880 |
| Palavras-Chave | #半导体材料 #InAs/InGaAs |
| Tipo |
期刊论文 |
