Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot


Autoria(s): Chang K; Chan KS; Peeters FM
Data(s)

2005

Resumo

Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot embedded in a tunneling barrier is investigated using the Bardeen transfer Hamiltonian. The tunneling current oscillates with an increasing magnetic field for a fixed bias. Many peaks are observed with an increasing external bias under a fixed magnetic field. Spin polarization of the tunneling current is tuned by changing the external bias under a weak magnetic field.

Identificador

http://ir.semi.ac.cn/handle/172111/8742

http://www.irgrid.ac.cn/handle/1471x/63901

Idioma(s)

英语

Fonte

Chang, K; Chan, KS; Peeters, FM .Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot ,PHYSICAL REVIEW B,APR 2005,71 (15):Art.No.155309

Palavras-Chave #半导体物理 #HETEROSTRUCTURE
Tipo

期刊论文