Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot
Data(s) |
2005
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Resumo |
Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot embedded in a tunneling barrier is investigated using the Bardeen transfer Hamiltonian. The tunneling current oscillates with an increasing magnetic field for a fixed bias. Many peaks are observed with an increasing external bias under a fixed magnetic field. Spin polarization of the tunneling current is tuned by changing the external bias under a weak magnetic field. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Chang, K; Chan, KS; Peeters, FM .Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot ,PHYSICAL REVIEW B,APR 2005,71 (15):Art.No.155309 |
Palavras-Chave | #半导体物理 #HETEROSTRUCTURE |
Tipo |
期刊论文 |