1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 mu m. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 mu m, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3x10(-7) A/cm(2) at a bias of 0 V and 4.3x10(-5) A/cm(2) at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps. (c) 2005 American Institute of Physics.