Artificial nanograting woven by self-assembled nanowires


Autoria(s): Liu FQ; Shao Y; Huang XQ; Wang ZG
Data(s)

2005

Resumo

We report on a new simple route to realize a high resolution nanograting. By adopting an InAlGaAs matrix and strain-compensated technique, we have proved that a uniform self-assembled InAs nanowire array can be fabricated by molecular beam epitaxy (MBE). A nanograting woven by self-assembled semiconductor nanowires shows a conspicuous diffraction feature. The good agreement between the theoretical and experimental values of diffraction peak positions indicates that a uniform nanowire array is a promising nanograting. This simple one-step MBE growth method will open exciting opportunities for the field of clever optics design.

Identificador

http://ir.semi.ac.cn/handle/172111/8442

http://www.irgrid.ac.cn/handle/1471x/63751

Idioma(s)

英语

Fonte

Liu, FQ; Shao, Y; Huang, XQ; Wang, ZG .Artificial nanograting woven by self-assembled nanowires ,NANOTECHNOLOGY,OCT 2005,16 (10):2077-2081

Palavras-Chave #半导体材料 #LITHOGRAPHY
Tipo

期刊论文