Optical properties of boron-doped Si nanowires
| Data(s) |
2004
|
|---|---|
| Resumo |
Raman scattering and photoluminescence (PL) of boron-doped silicon nanowires have been investigated. Raman spectra showed a band at 480 cm(-1), indicating that the crystallinity of the nanowires was suppressed by boron doping. PL taken from B-doped SiNWS at room temperature exhibited three distinct emission peaks at 1.34, 1.42. and 1.47 eV and the PL intensity was much stronger than that of undoped SiNWS. The increased PL intensity should be very profitable for nano-optoelectronics. (C) 2004 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zeng, XB; Liao, XB; Wang, B; Dai, ST; Xu, YY; Xiang, XB; Hu, ZH; Diao, HW; Kong, GL .Optical properties of boron-doped Si nanowires ,JOURNAL OF CRYSTAL GROWTH,APR 15 2004,265 (1-2):94-98 |
| Palavras-Chave | #半导体材料 #chemical vapor deposition processes |
| Tipo |
期刊论文 |
