Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition
Data(s) |
2004
|
---|---|
Resumo |
The in situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above low-temperature AlN buffer layer on c-plane sapphire substrate by metalorganic chemical vapor deposition. It is found that the lateral growth of GaN islands and their coalescence is promoted in the initial growth stage if the AlN buffer layer is treated with a long annealing time and has an optimal thickness: As confirmed by atomic force microscopy observations, the quality of GaN epilayers is closely dependent on the surface morphology of AlN buffer layer, especially the grain size and nuclei density after the annealing treatment. (C) 2004 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhao, DG; Zhu, JJ; Liu, ZS; Zhang, SM; Yang, H; Jiang, DS .Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition ,APPLIED PHYSICS LETTERS,AUG 30 2004,85 (9):1499-1501 |
Palavras-Chave | #光电子学 #SAPPHIRE SUBSTRATE |
Tipo |
期刊论文 |