Size dependence of biexciton binding energy in single InAs/GaAs quantum dots


Autoria(s): Don XM; Sun BQ; Huang SS; Ni HQ; Niu ZC; Yang FH; Jia R
Data(s)

2009

Resumo

This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show "binding" and "antibinding" properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler-London method.

National Natural Science Foundations of China O69C041001 2007CB924904 Project supported by the National Natural Science Foundations of China (Grant Nos O69C041001 and 2007CB924904).

Identificador

http://ir.semi.ac.cn/handle/172111/7175

http://www.irgrid.ac.cn/handle/1471x/63325

Idioma(s)

英语

Fonte

Don XM ; Sun BQ ; Huang SS ; Ni HQ ; Niu ZC ; Yang FH ; Jia R .Size dependence of biexciton binding energy in single InAs/GaAs quantum dots ,CHINESE PHYSICS B,2009 ,18(6):2258-2263

Palavras-Chave #半导体物理 #biexcition binding energy #single quantum dots #exciton molecular model #Heitler-London method
Tipo

期刊论文