A GaN photodetector integrated structure for wavelength characterization of ultraviolet light

An interesting GaN photodetector structure, which can be used for characterizing the wavelength of incident ultraviolet light, is proposed. It is composed of two back-to-back integrated diodes, i.e. p-n and p-i-n GaN ultraviolet photodiodes with different spectral response. The wavelength of monochromatic ultraviolet light could be identified by measuring the photocurrent ratio value through a simple electronic circuit.

National Natural Science Foundation of China 60776047 605060016047602160576003National Basic Research Program of China 2007CB936700 National High Technology Research and Development Program of China 2007AA03Z401 The authors acknowledge the support from the National Natural Science Foundation of China (Grant Nos 60776047, 60506001, 60476021 and 60576003), the National Basic Research Program of China ( Grant No 2007CB936700) and the National High Technology Research and Development Program of China (Grant No 2007AA03Z401).