First-principle study of native defects in CuScO2 and CuYO2


Autoria(s): Fang, ZJ; Shi, LJ; Liu, YH
Data(s)

2008

Resumo

This paper studies the electronic structure and native defects intransparent conducting oxides CuScO2 and CuYO2 using the first-principle calculations. Some typical native copper-related and oxygen-related defects, such as vacancy, interstitials, and antisites in their relevant charge state are considered. The results of calculation show that, CuMO2 (M = Sc, Y) is impossible to shown-type conductivity ability. It finds that copper vacancy and oxygen interstitial have relatively low formation energy and they are the relevant defects in CuScO2 and CuYO2. Copper vacancy is the most efficient acceptor, and under O-rich condition oxygen antisite also becomes important acceptor and plays an important role in p-type conductivity.

National Natural Science Foundation of China 60325416 605210019030100760576036Project supported by the National Natural Science Foundation of China (Grant Nos 60325416, 60521001, 90301007 and 60576036).

Identificador

http://ir.semi.ac.cn/handle/172111/6340

http://www.irgrid.ac.cn/handle/1471x/62908

Idioma(s)

英语

Fonte

Fang, ZJ ; Shi, LJ ; Liu, YH .First-principle study of native defects in CuScO2 and CuYO2 ,CHINESE PHYSICS B,2008 ,17(11): 4279-4284

Palavras-Chave #半导体物理 #CuMO2 #native defects #vienna ab-initio simulation package (VASP)
Tipo

期刊论文