高均匀性(In)GaAsP/(AlGa)0.5In0.5P外延片的生长方法
| Data(s) |
04/02/2009
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:34Z (GMT). No. of bitstreams: 1 full/CN200710119872.X.pdf: 884098 bytes, checksum: 4f394bc03a148b81d3f3a7211075224f (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
仲莉;马骁宇 ,高均匀性(In)GaAsP/(AlGa)0.5In0.5P外延片的生长方法,CN200710119872.X,20070802 |
| Tipo |
专利 |
