利用准分子激光退火制作SiGe或Ge量子点的方法


Autoria(s): 韩根全; 曾玉刚; 余金中
Data(s)

04/03/2009

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/4313

http://www.irgrid.ac.cn/handle/1471x/61638

Idioma(s)

中文

Fonte

韩根全;曾玉刚;余金中,利用准分子激光退火制作SiGe或Ge量子点的方法 ,CN200710121073.6,20070829

Tipo

专利