利用UHV/CVD低温生长SiGe材料的方法
| Data(s) |
04/03/2009
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:33Z (GMT). No. of bitstreams: 1 full/CN200710121072.1.pdf: 375690 bytes, checksum: da52e2a02877617342be7436b10c281d (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
韩根全;曾玉刚;余金中,利用UHV/CVD低温生长SiGe材料的方法 ,CN200710121072.1,20070829 |
| Tipo |
专利 |
