高温原位减薄硅基底的装置和方法


Autoria(s): 刘祥林; 杨少延; 焦春美
Data(s)

31/12/2008

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/4259

http://www.irgrid.ac.cn/handle/1471x/61611

Idioma(s)

中文

Fonte

刘祥林;杨少延;焦春美,高温原位减薄硅基底的装置和方法,CN200710118005.4,20070627

Tipo

专利