MOCVD生长掺杂半导体材料的低温退火方法
| Data(s) |
19/11/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:30Z (GMT). No. of bitstreams: 1 full/CN200710099292.9.pdf: 411495 bytes, checksum: 797d0b565b4ac58c1141217b666507d6 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
韦欣,MOCVD生长掺杂半导体材料的低温退火方法,CN200710099292.9,20070516 |
| Tipo |
专利 |
