高晶体质量氮化物外延生长所用图形衬底的制备方法


Autoria(s): 张扬; 闫发旺; 高海永; 曾一平; 王国宏; 张会肖; 李晋闽
Data(s)

29/10/2008

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/4233

http://www.irgrid.ac.cn/handle/1471x/61598

Idioma(s)

中文

Fonte

张扬;闫发旺;高海永;曾一平;王国宏;张会肖;李晋闽,高晶体质量氮化物外延生长所用图形衬底的制备方法,CN200710098702.8,20070425

Tipo

专利