高晶体质量氮化物外延生长所用图形衬底的制备方法
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29/10/2008
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:30Z (GMT). No. of bitstreams: 1 full/CN200710098702.8.pdf: 575275 bytes, checksum: afd22218909d27da24c55fc9ecfba728 (MD5) Previous issue date: |
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中文 |
Fonte |
张扬;闫发旺;高海永;曾一平;王国宏;张会肖;李晋闽,高晶体质量氮化物外延生长所用图形衬底的制备方法,CN200710098702.8,20070425 |
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专利 |