基于氮化铝缓冲层的硅基3C-碳化硅异质外延生长方法
| Data(s) |
08/10/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:29Z (GMT). No. of bitstreams: 1 full/CN200710065183.5.pdf: 373928 bytes, checksum: 3d352b7ea73bcc177f2ecaf0d0464918 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
赵永梅;孙国胜;刘兴昉;李家业;王雷;赵万顺;李晋闽;曾一平,基于氮化铝缓冲层的硅基3C-碳化硅异质外延生长方法,CN200710065183.5,20070405 |
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专利 |
