一种在砷化镓衬底上外延生长锑化镓的方法


Autoria(s): 郝瑞亭; 周志强; 任正伟; 徐应强; 牛智川
Data(s)

25/06/2008

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/4171

http://www.irgrid.ac.cn/handle/1471x/61567

Idioma(s)

中文

Fonte

郝瑞亭;周志强;任正伟;徐应强;牛智川,一种在砷化镓衬底上外延生长锑化镓的方法 ,CN200610165547.2,20061221

Tipo

专利