一种互补式金属氧化层半导体噪声发生器


Autoria(s): 周盛华; 吴南健
Data(s)

18/06/2008

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/4085

http://www.irgrid.ac.cn/handle/1471x/61524

Idioma(s)

中文

Fonte

周盛华;吴南健,一种互补式金属氧化层半导体噪声发生器 ,200610165116,20061213

Tipo

专利