具光磁性质含MnInAs/GaAs量子点样品的结构及制备方法


Autoria(s): 胡良均; 陈涌海; 叶小玲; 王占国
Data(s)

11/06/2008

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:58:23Z (GMT). No. of bitstreams: 1 full/200610164880.pdf: 566734 bytes, checksum: d121ea916d8053dc40ff96d87c60c2c7 (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/4059

http://www.irgrid.ac.cn/handle/1471x/61511

Idioma(s)

中文

Fonte

胡良均;陈涌海;叶小玲;王占国,具光磁性质含MnInAs/GaAs量子点样品的结构及制备方法 ,200610164880,20061207

Tipo

专利