低损伤PECVD沉积致密SiO2的方法
| Data(s) |
07/05/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:21Z (GMT). No. of bitstreams: 1 full/200610114192.pdf: 395287 bytes, checksum: fd0af7ff765e4e1166c31800b6bf9083 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
陈宇;王良臣;伊晓燕;李艳,低损伤PECVD沉积致密SiO2的方法 ,200610114192,20061101 |
| Tipo |
专利 |
