一种具有侧栅结构的硅基单电子记忆存储器及其制作方法
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07/05/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:21Z (GMT). No. of bitstreams: 1 full/200610114189.pdf: 1865925 bytes, checksum: 0365fd0d4abb1d1b0edc5f86b84ed22f (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
韩伟华;杨香;吴南健,一种具有侧栅结构的硅基单电子记忆存储器及其制作方法 ,200610114189,20061101 |
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专利 |
