一种制作纵向双栅金属-氧化物-半导体器件的方法
| Data(s) |
07/05/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:20Z (GMT). No. of bitstreams: 1 full/200610114187.pdf: 1042030 bytes, checksum: c905753f791fabd043a68d3b77debb4b (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
屠晓光;陈少武,一种制作纵向双栅金属-氧化物-半导体器件的方法 ,200610114187,20061101 |
| Tipo |
专利 |
