声子调控间接带隙半导体材料横向电注入发光器件


Autoria(s): 张建国; 王晓欣; 成步文; 余金中; 王启明
Data(s)

02/04/2008

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:58:18Z (GMT). No. of bitstreams: 1 full/200610113405.pdf: 976081 bytes, checksum: d065b2603e5d5e6de64e42b9032e2c6b (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/3991

http://www.irgrid.ac.cn/handle/1471x/61477

Idioma(s)

中文

Fonte

张建国;王晓欣;成步文;余金中;王启明,声子调控间接带隙半导体材料横向电注入发光器件 ,200610113405,20060927

Tipo

专利