三电容MOS硅基高速高调制效率电光调制器


Autoria(s): 陈弘达; 黄北举; 刘金彬; 顾明; 刘海军
Data(s)

05/03/2008

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:58:17Z (GMT). No. of bitstreams: 1 full/200610112700.pdf: 591634 bytes, checksum: 1ba461f64273e115a2a742d85837e530 (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/3971

http://www.irgrid.ac.cn/handle/1471x/61467

Idioma(s)

中文

Fonte

陈弘达;黄北举;刘金彬;顾明;刘海军,三电容MOS硅基高速高调制效率电光调制器 ,200610112700,20060830

Tipo

专利