太赫兹量子级联半导体激光器材料及其生长方法


Autoria(s): 李路; 刘峰奇; 刘俊岐; 邵烨; 王占国
Data(s)

20/02/2008

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3967

http://www.irgrid.ac.cn/handle/1471x/61465

Idioma(s)

中文

Fonte

李路;刘峰奇;刘俊岐;邵烨;王占国,太赫兹量子级联半导体激光器材料及其生长方法 ,200610112407,20060816

Tipo

专利