半导体应变弛豫材料的制作方法
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02/01/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:15Z (GMT). No. of bitstreams: 1 full/200610089447.pdf: 509734 bytes, checksum: a938b9e98121b968ce97bb7dba7e6da3 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
成步文;姚飞;薛春来;张建国;左玉华;王启明,半导体应变弛豫材料的制作方法 ,200610089447,20060628 |
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专利 |
