采用干法刻蚀技术实现RTD与HEMT单片集成的方法


Autoria(s): 马龙; 杨富华; 王良臣; 黄应龙
Data(s)

31/10/2007

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3899

http://www.irgrid.ac.cn/handle/1471x/61431

Idioma(s)

中文

Fonte

马龙;杨富华;王良臣;黄应龙,采用干法刻蚀技术实现RTD与HEMT单片集成的方法,200610076521 ,20060428

Tipo

专利