碳化硅衬底氮化镓高电子迁移率晶体管及制作方法
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25/07/2007
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:11Z (GMT). No. of bitstreams: 1 full/200610011228.pdf: 741827 bytes, checksum: ec0b1078b04f23b7bcab22cf13e1dc8a (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
王晓亮;胡国新;马志勇;冉学军;王翠敏;肖红领;王军喜;李建平;曾一平;李晋闽,碳化硅衬底氮化镓高电子迁移率晶体管及制作方法,200610011228 ,20060118 |
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专利 |
