具有氮化铪薄中间层的SOI型复合可协变层衬底
| Data(s) |
15/08/2007
|
|---|---|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:10Z (GMT). No. of bitstreams: 1 full/200610003530.pdf: 946509 bytes, checksum: 7a34afd24d322fdff3c4b45a05b13ed2 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
杨少延;陈涌海;李成明;范海波;王占国,具有氮化铪薄中间层的SOI型复合可协变层衬底,200610003530 ,20060209 |
| Tipo |
专利 |
