半导体硅衬底上氧化铝介电薄膜硅离子注入腐蚀方法
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13/06/2007
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:08Z (GMT). No. of bitstreams: 1 full/200510126243.pdf: 350702 bytes, checksum: e1e0383e68615d2039c5731cf411bc42 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
王启元;王俊;王建华,半导体硅衬底上氧化铝介电薄膜硅离子注入腐蚀方法 ,200510126243,20051130 |
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专利 |
