在硅衬底上生长无裂纹氮化镓薄膜的方法
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23/05/2007
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:05Z (GMT). No. of bitstreams: 1 full/200510086899.pdf: 440050 bytes, checksum: d2d91e7ccf6b9c6fa5f569a3149f3150 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
刘喆;李晋闽;王军喜;王晓亮;王启元;刘宏新;王俊;曾一平,在硅衬底上生长无裂纹氮化镓薄膜的方法 ,200510086899,20051117 |
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专利 |
