一种硅基并联MOS电容结构高速电光调制器及制作方法


Autoria(s): 屠晓光; 陈少武
Data(s)

07/02/2007

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3623

http://www.irgrid.ac.cn/handle/1471x/61293

Idioma(s)

中文

Fonte

屠晓光;陈少武,一种硅基并联MOS电容结构高速电光调制器及制作方法 ,200510088976 ,20050804

Tipo

专利