提高硅薄膜致密性的制备方法


Autoria(s): 谭满清; 赵妙
Data(s)

28/03/2007

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3579

http://www.irgrid.ac.cn/handle/1471x/61271

Idioma(s)

中文

Fonte

谭满清;赵妙,提高硅薄膜致密性的制备方法 ,200510086466 ,20050922

Tipo

专利